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Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer

Huiwen Luo1,2, Junze Li3,4, Mo Li5,6

  • 1Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China. luohuiwen@mtrc.ac.cn.

Micromachines
|October 17, 2019
PubMed

Keywords:
GaN-based vertical-cavity surface-emitting laser (VCSEL)composition-graded AlxGa1−xN electron blocking layer (EBL)electron leakage

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