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Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology
Cheng Gu1, Rui Chen2, George Belev3
1Electrical Computer Engineering, University of Saskatchewan, Engineering Building 57 Campus Dr, Saskatoon, SK S7N5A9, Canada. gucheng.alex@usask.ca.
Materials (Basel, Switzerland)
|October 23, 2019
Summary
This study details a laser-based system for analyzing single-event effects (SEEs) in integrated circuits. The developed methods ensure system stability and accurately map SEE sensitivity in Static Random Access Memory (SRAM) devices.
Area of Science:
- Integrated Circuit Reliability
- Laser-Induced Effects
- Semiconductor Device Physics
Background:
- Single-event effects (SEEs) pose a significant threat to the reliability of integrated circuits.
- Ultra-fast pulsed laser systems offer a viable method for studying SEEs via Two Photon Absorption (TPA).
- Accurate characterization of laser-based testing systems is crucial for reliable SEE analysis.
Purpose of the Study:
- To present technical methodologies for characterizing key parameters of a laser-based SEE mapping testing system.
- To establish a stable and controllable laser system for SEE analysis.
- To create a sensitivity map of a 65 nm Static Random Access Memory (SRAM) cell using the developed system.
Main Methods:
- Characterization of laser output power, objective lens spot size, Pockels cell opening window, and injected laser energy calibration.
- Development and application of a laser-based system for SEE mapping.
- Comparison of experimentally generated SRAM sensitivity maps with those from commercial simulation tools (e.g., TFIT).
Main Results:
- The laser-based SEE mapping testing system was demonstrated to operate stably and controllably.
- A sensitivity map of a 65 nm SRAM cell was successfully generated.
- Experimental results closely matched the sensitivity map generated by the TFIT simulation tool.
- Energy distribution profiles along the Z-axis and threshold energies for different SRAM structures were obtained.
Conclusions:
- The presented technical characterization methods enable stable and controllable laser-based SEE testing.
- The established laser system accurately maps SEE sensitivity in SRAM devices, validated by simulation comparison.
- The study provides valuable data on laser energy distribution and threshold energies for SRAM structures, aiding in device design and reliability assessment.
