Enhanced Resistance Switching of Ga₂O₃ Thin Films by Ultraviolet Radiation

Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultrawide band gap semiconductor, Ga₂O₃ has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I-V characteristics of Au/Ti/β-Ga₂O₃/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.