Vascular complications associated with percutaneous left ventricular assist device placement: A 10-year US

Nilay Patel1, Akshit Sharma1, Tarun Dalia1

  • 1Division of Cardiovascular Diseases, University of Kansas Medical Center, Kansas City, Kansas.

Insights

Percutaneous left ventricular assist device (p-LVAD) use is rising, but carries a high risk of vascular complications. These complications increase mortality, hospital stay, and costs, necessitating careful consideration during p-LVAD decision-making.

Area of Science:

  • Cardiology
  • Interventional Cardiology
  • Medical Device Technology

Background:

  • Increasing utilization of percutaneous left ventricular assist devices (p-LVADs) in complex coronary interventions and acute cardiogenic shock.
  • Large-bore percutaneous devices are associated with a heightened risk of vascular complications.

Purpose of the Study:

  • To examine the incidence and outcomes of vascular complications associated with p-LVAD placement.
  • To analyze trends in vascular complication rates using a national inpatient database.

Main Methods:

  • Secondary analysis of the National Inpatient Sample (NIS) dataset from 2005-2015.
  • Identification of p-LVAD placements using ICD-9-CM codes (37.68, 37.62).
  • Statistical comparison of vascular complication rates, mortality, length of stay, and costs.

Main Results:

  • A total of 31,263 p-LVAD placements were identified.
  • The overall incidence of vascular complications was 13.53%, with 56% requiring surgical intervention.
  • Vascular complications were linked to increased in-hospital mortality, longer hospital stays, and higher hospitalization costs.

Conclusions:

  • Percutaneous left ventricular assist device placement is associated with a significant rate of vascular complications, often necessitating surgical treatment.
  • These complications substantially increase in-hospital mortality, length of stay, and healthcare costs.
  • Findings underscore the importance of considering these risks in the clinical decision-making process for p-LVAD implantation.
Abstract