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Related Concept Videos

Resistivity01:22

Resistivity

4.3K
When a voltage is applied to a conductor, an electrical field is generated, and charges in the conductor feel the force due to the electrical field. The current density that results depends on the electrical field and the properties of the material. In some materials, including metals at a given temperature, the current density is approximately proportional to the electrical field. In these cases, the current density can be modeled as:
4.3K
Electrical Conductivity01:13

Electrical Conductivity

1.7K
In perfect conductors, the electric field inside is always zero due to the abundance of free electrons, which nullify any field by flowing. As a result, any residual charge resides on the surface.
In a practical conductor, an applied electric field may be sustained, causing a flow of electrons, which produce a current. The differential form of the current, the current density, is related to the electric field.
More generally, it is related to the force per unit charge, which involves the...
1.7K
Non-ohmic Devices00:51

Non-ohmic Devices

1.4K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.4K
Boundary Conditions for Current Density01:25

Boundary Conditions for Current Density

1.3K
Current density becomes discontinuous across an interface of materials with different electrical conductivities. The normal component of the current density is continuous across the boundary.
1.3K
Resistance01:19

Resistance

5.6K
When a current moves through any conductor, the conductor causes some level of difficulty for the current to flow. The measure of that difficulty is known as the resistance of the material and is represented by R. Every material has its own resistance. In the case of conductors, heat is emitted whenever a current passes through them. Resistance depends on the resistivity of the material. Resistivity is a characteristic of the material used to fabricate electrical components, whereas the...
5.6K
Susceptibility, Permittivity and Dielectric Constant01:26

Susceptibility, Permittivity and Dielectric Constant

2.7K
When placed in an external electric field, a dielectric material gets polarized. The charge density in the dielectric material is given by the sum of the bound and free charge densities, while the total charge density can also be written in terms of the total electric field. The bound charge density can be measured in terms of polarization, leading to the relationship between electric displacement and polarization.
2.7K

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Related Experiment Video

Updated: Jan 5, 2026

Building Langmuir Probes and Emissive Probes for Plasma Potential Measurements in Low Pressure, Low Temperature Plasmas
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Electrical resistivity calculations in dense plasmas.

Gérald Faussurier1, Christophe Blancard1

  • 1CEA, DAM, DIF, F-91297 Arpajon, France.

Physical Review. E
|October 24, 2019
PubMed
Summary

We calculated electrical resistivity in dense plasmas using the average-atom model. The Born approximation improves these calculations, especially in hot, dense plasma conditions.

Area of Science:

  • Plasma Physics
  • Condensed Matter Physics
  • Computational Physics

Background:

  • Understanding plasma properties is crucial for fields like astrophysics and inertial confinement fusion.
  • Accurate electrical resistivity calculations are essential for modeling plasma behavior.
  • The average-atom model provides a framework for studying dense plasmas.

Purpose of the Study:

  • To present calculations of electrical resistivity in dense plasmas.
  • To introduce the Born approximation for enhancing resistivity computations.
  • To investigate both nonrelativistic and relativistic plasma regimes.

Main Methods:

  • Utilizing the average-atom model for plasma property calculations.
  • Applying the Born approximation to refine electrical resistivity computations.

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  • Performing numerical simulations across various density and temperature conditions.

    • Main Results:

    • Electrical resistivity values were computed for dense plasmas.
    • The Born approximation demonstrated improved accuracy, particularly in hot plasma domains.
    • Calculations covered both nonrelativistic and relativistic plasma regimes.

    Conclusions:

    • The average-atom model, enhanced by the Born approximation, offers a viable method for calculating dense plasma electrical resistivity.
    • The proposed method is effective across a range of plasma conditions, including hot and dense regimes.
    • Numerical examples validate the accuracy and applicability of the approach.