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Updated: Jan 5, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Low-Energy-Consumption Three-Valued Memory Device Inspired by Solid-State Batteries
Yuki Watanabe1, Shigeru Kobayashi1, Issei Sugiyama1
1School of Materials and Chemical Technology , Tokyo Institute of Technology , 2-12-1 Ookayama , Meguro , Tokyo 152-8550 , Japan.
Abstract:
We report the creation of a low-energy-consumption three-valued memory device based on the switching of open-circuit voltages. This device consists of a stack of Li, Li3PO4 solid electrolyte, and Ni electrode films. We observed reversible voltage switching between high, intermediate, and low open-circuit voltages. According to the scaling law, the energy required to switch a device is estimated to be 8.8 × 10-11 J/μm2 and this value is almost 1/50 of that of a typical dynamic random access memory. Both the high- and low-voltage states converged to the intermediate-voltage state, indicating that the intermediate-voltage state is the most stable metastable state.
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