Pressure-controlled interlayer magnetism in atomically thin CrI3.
Tingxin Li1, Shengwei Jiang2, Nikhil Sivadas1
1School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
Hydrostatic pressure induces an irreversible magnetic transition in chromium triiodide (CrI3) thin films, shifting from antiferromagnetic to ferromagnetic coupling. This change is linked to a pressure-induced alteration in the material's stacking order.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Magnetism
Background:
- Stacking order significantly impacts the physical properties of 2D van der Waals materials.
- Chromium triiodide (CrI3) is a van der Waals magnetic insulator with potential applications in spintronics.
Purpose of the Study:
- To investigate the effect of hydrostatic pressure on the stacking order and magnetic properties of CrI3.
- To explore the relationship between stacking order and magnetic ground state in CrI3 thin films.
Main Methods:
- Application of hydrostatic pressure up to 2 GPa.
- Magnetic Circular Dichroism (MCD) and electron tunneling measurements to probe magnetic transitions.
- Polarized Raman spectroscopy to characterize structural changes (stacking order).
Main Results:
- An irreversible antiferromagnetic-to-ferromagnetic interlayer magnetic transition was observed in CrI3 thin films under pressure.
- The magnetic transition was accompanied by a pressure-induced change in stacking order from monoclinic to rhombohedral.
- Interlayer antiferromagnetic coupling energy was tunable by nearly 100% with pressure before the structural transition.
- The study revealed an interlayer ferromagnetic ground state in CrI3, not previously observed in exfoliated thin films.
Conclusions:
- Stacking order is a critical factor determining the magnetic ground state of CrI3.
- Pressure-induced structural modifications can be used to engineer magnetic properties in 2D materials.
- Findings align with theoretical calculations and suggest pathways for creating nanoscale magnetic textures via moiré engineering.
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