Environmentally Robust Memristor Enabled by Lead-Free Double Perovskite for High-Performance Information Storage.

Area of Science:

• Materials Science
• Solid-State Physics
• Device Engineering

Background:

• Memristors are crucial for next-generation computing and data storage.
• Current memristors lack stability in harsh environmental conditions, limiting practical applications.

Purpose of the Study:

• To develop environmentally robust memristors using lead-free double perovskite Cs2AgBiBr6.
• To demonstrate the potential of Cs2AgBiBr6 for high-performance, stable information storage.

Main Methods:

• Fabrication of indium-tin-oxide/Cs2AgBiBr6/Au sandwich-like memristors.
• Testing memristive performance under various environmental stresses (humidity, temperature, flame, irradiation) and operational conditions (switching cycles, read endurance, mechanical bending).

Main Results:

• The Cs2AgBiBr6 memristors exhibited stable memory performance over 1000 switching cycles, 10^5 s read endurance, and 10^4 bending cycles.
• Exceptional robustness was observed in high humidity (80%), high temperatures (453 K), direct flame exposure, and gamma-ray irradiation (5x10^5 rad).

Conclusions:

• Lead-free Cs2AgBiBr6 is a promising material for creating highly stable and efficient memristors.
• This breakthrough paves the way for robust electronics resistant to extreme environmental factors.