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Novel remapping approach for HR-EBSD based on demons registration.

Chaoyi Zhu1, Kevin Kaufmann2, Kenneth S Vecchio3

  • 1Materials Science and Engineering Program, UC San Diego, La Jolla, CA 92093, USA.

Ultramicroscopy
|November 1, 2019
PubMed
Summary

This study introduces demons registration, a computer vision algorithm for electron backscatter diffraction (EBSD) pattern remapping. It enhances speed and accuracy, especially for high-resolution EBSD applications.

Keywords:
Additive manufacturingGeometrically necessary dislocationsHR-EBSDImage registrationInconel 625Residual stress

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Area of Science:

  • Materials Science
  • Computer Vision
  • Crystallography

Background:

  • Electron Backscatter Diffraction (EBSD) is crucial for analyzing material microstructures.
  • Accurate remapping of EBSD patterns is essential for high-resolution analysis.
  • Conventional methods can be time-consuming and limited in angular resolution.

Purpose of the Study:

  • To evaluate the efficacy of demons registration for High Resolution Electron Backscatter Diffraction (HR-EBSD).
  • To improve the speed and accuracy of EBSD pattern remapping.
  • To apply the developed method to analyze residual stresses in additively manufactured materials.

Main Methods:

  • Utilized demons registration, a computer vision algorithm, for EBSD pattern remapping.
  • Implemented GPU acceleration to enhance the speed of iterative registration.
  • Combined demons registration with cross-correlation for a two-pass remapping approach.

Main Results:

  • Demons registration offers improved speed, with GPU acceleration reducing registration time to under 1 second.
  • The two-pass remapping method achieved an angular resolution of approximately 0.5 × 10⁻⁴ rad.
  • Applied to Inconel 625, the method revealed significant residual stresses and geometrically necessary dislocation (GND) structures.

Conclusions:

  • Demons registration is a viable and efficient method for HR-EBSD pattern remapping.
  • The developed two-pass method enhances angular resolution and stress/strain analysis accuracy.
  • The technique provides valuable insights into residual stress in additively manufactured components.