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Readable High-Speed Racetrack Memory Based on an Antiferromagnetically Coupled Soft/Hard Magnetic Bilayer.

Ziyang Yu1, Chenhuinan Wei2, Fan Yi3

  • 1Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China. tommyu91@163.com.

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This study introduces a novel synthetic antiferromagnet racetrack memory. It enables readable information storage using staggered magnetic domains, overcoming challenges in antiferromagnetic memory systems.

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antiferromagnetically coupledhigh-speedreadablesoft/hard magnetic bilayer

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Area of Science:

  • Spintronics
  • Materials Science
  • Nanotechnology

Background:

  • Current-induced domain wall (DW) motion in synthetic antiferromagnets (SAFs) offers ultrahigh velocities for racetrack memory.
  • The zero net magnetization in antiferromagnetically (AFM) coupled domains poses challenges for information readout.

Purpose of the Study:

  • To propose a readable SAF racetrack memory design.
  • To enable efficient information readout from SAF structures.

Main Methods:

  • Utilizing two ferromagnetic (FM) layers with distinct uniaxial-anisotropy constants.
  • Engineering a staggered domain region between neighboring DWs.
  • Exploiting parallel magnetization alignment for readability.

Main Results:

  • A readable staggered domain region is formed between DWs in the two FM layers.
  • This region exhibits parallel magnetization, allowing for information labeling.
  • Stability and length of the staggered region are tunable via magnetic parameters.

Conclusions:

  • The proposed readable SAF racetrack memory overcomes readout challenges in AFM systems.
  • Tunable magnetic parameters allow for optimized memory performance.
  • This design is compatible with existing experimental capabilities.