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Related Experiment Video

Updated: Jan 4, 2026

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
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Enhancing Pockels effect in strained silicon waveguides.

Irene Olivares, Jorge Parra, Antoine Brimont

    Optics Express
    |November 2, 2019
    PubMed
    Summary
    This summary is machine-generated.

    This study introduces a novel p-i-n junction and asymmetric cladding design for strained silicon devices. This configuration significantly enhances electro-optic modulation by overcoming free carrier effects and boosting the strain-induced Pockels effect.

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    Area of Science:

    • Optoelectronics
    • Materials Science
    • Semiconductor Physics

    Background:

    • The electro-optic response in strained silicon devices is debated, with free carriers masking effects.
    • Existing designs show limited interaction between optical modes and strained regions.

    Purpose of the Study:

    • To propose a new device configuration to eliminate carrier influence.
    • To enhance the electro-optical modulation response in strained silicon waveguides.

    Main Methods:

    • Utilizing a p-i-n junction within the device structure.
    • Implementing an asymmetric cladding design for the waveguide.

    Main Results:

    • The proposed configuration effectively eliminates the masking effect of free carriers.
    • A significant enhancement (over two orders of magnitude) in the effective refractive index was achieved.
    • The strain-induced Pockels effect was substantially amplified.

    Conclusions:

    • The p-i-n junction and asymmetric cladding offer a superior approach for electro-optic modulation in strained silicon.
    • This design overcomes limitations of previous configurations, paving the way for improved optoelectronic devices.