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Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor

Shouhui Zhu1, Guangdong Zhou2, Weiyong Yuan2

  • 1School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.

Journal of Colloid and Interface Science
|November 5, 2019
PubMed

Keywords:
Bio-electronic deviceBio-memristorCapacitive effectsCurrent-voltage hysteresisNon-zero-crossing

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