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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
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Related Experiment Video

Updated: Jan 4, 2026

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
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Bidirectional and dynamically tunable THz absorber with Dirac semimetal.

Haiyu Meng, Xiongjun Shang, Xiongxiong Xue

    Optics Express
    |November 6, 2019
    PubMed
    Summary
    This summary is machine-generated.

    This study introduces a novel bidirectional terahertz (THz) absorber using bulk Dirac semimetal (BDS)-AlCuFe quasicrystals. The proposed absorber achieves tunable perfect absorption from both front and back incidence, overcoming limitations of traditional designs.

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    Area of Science:

    • Optics and Photonics
    • Materials Science
    • Condensed Matter Physics

    Background:

    • Traditional absorbers often use sandwich structures with metallic ground planes, limiting light incidence to one side.
    • Existing designs struggle with bidirectional absorption and dynamic tunability in the terahertz spectrum.

    Purpose of the Study:

    • To propose and demonstrate a novel bidirectional and dynamically tunable terahertz absorber.
    • To utilize bulk Dirac semimetal (BDS)-AlCuFe quasicrystals for advanced absorption properties.

    Main Methods:

    • Designing a novel absorber structure with two layers of AlCuFe plates featuring rectangular apertures and a dielectric spacer.
    • Simulating the absorption performance under varying transverse distances between apertures and for TM polarization.
    • Investigating the dynamic tunability by leveraging the variable Fermi level of AlCuFe.

    Main Results:

    • Achieved perfect absorption for terahertz waves, functioning bidirectionally (front and back incidence).
    • Demonstrated dynamic tunability of the resonance frequency within the THz range by adjusting the Fermi level.
    • Confirmed that perfect absorption is achievable by optimizing the transverse distance between apertures.

    Conclusions:

    • The proposed BDS-AlCuFe quasicrystal absorber offers a significant advancement over traditional designs.
    • This work paves the way for new investigations into BDS-based bidirectional absorbers and optical modulators.
    • The dynamic tunability and bidirectional absorption capabilities are key features for future THz applications.