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Wavelength-stabilized near-field laser.

V A Shchukin, N N Ledentsov, A Yu Egorov

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    |November 6, 2019
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    Summary
    This summary is machine-generated.

    Researchers demonstrate surface-trapped electromagnetic waves in semiconductor distributed Bragg reflectors (DBR) for novel optical devices. Tuning DBR layer thickness controls these modes, enabling wavelength-stabilized semiconductor lasers and amplifiers.

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    Area of Science:

    • Optics and Photonics
    • Semiconductor Physics
    • Materials Science

    Background:

    • Surface-trapped electromagnetic waves can localize at the interface of a semiconductor distributed Bragg reflector (DBR) and a dielectric medium.
    • These localized waves are crucial for developing advanced in-plane-emitting optical devices.

    Purpose of the Study:

    • To investigate the control of surface-trapped modes by tuning the DBR layer thickness.
    • To analyze the spectral characteristics and stability of these modes for laser applications.
    • To explore the potential of these structures in integrated photonics and high-brightness laser diodes.

    Main Methods:

    • Theoretical modeling and simulation of electromagnetic wave propagation.
    • Construction of wavelength-thickness diagrams for TM and TE optical modes.
    • Analysis of mode localization domains and cusps.
    • Calculation of lasing wavelength shift with temperature and optical power distribution.

    Main Results:

    • Surface-trapped modes are controllable by adjusting the thickness of a single DBR layer.
    • Wavelength-thickness diagrams reveal parameter domains for surface-trapped modes, featuring cusps for narrow spectral operation.
    • A structure designed for ~1 µm lasing shows a temperature-induced wavelength shift of ~0.08 nm/K.
    • Up to ~50% of the optical power can be localized in the adjacent homogeneous dielectric.

    Conclusions:

    • The demonstrated structure functions as a near-field, wavelength-stabilized semiconductor laser.
    • These structures are suitable for wavelength-stabilized semiconductor optical amplifiers in integrated photonics.
    • Potential applications include ultrahigh-brightness laser diodes, diode arrays, and stacks.