Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• High-performance electronic devices require stable metal-semiconductor contacts.
• Platinum diselenide (PtSe₂) exhibits a tunable semimetal-to-semiconductor transition with thickness.
• Controlling PtSe₂ thickness is crucial for device fabrication.

Purpose of the Study:

• To develop a scalable method for controlling PtSe₂ flake thickness.
• To fabricate a novel PtSe₂-based field-effect transistor with a homogeneous metal/semiconductor structure.
• To evaluate the performance of the fabricated device, focusing on contact resistance and carrier mobility.

Main Methods:

• Utilized inductively coupled plasma treatment for selective thickness control of PtSe₂ flakes.
• Fabricated a field-effect transistor using metallic PtSe₂ as source/drain electrodes and semiconducting PtSe₂ as the channel.
• Characterized the device performance, including contact resistance and carrier mobility.

Main Results:

• Achieved selective control over PtSe₂ flake thickness.
• Demonstrated a PtSe₂ field-effect transistor with a homogeneous metal/semiconductor coplanar structure.
• Reported a low contact resistance of 362 Ωμm and a carrier mobility of 150 cm² V⁻¹ s⁻¹.
• The device performance surpassed previously reported PtSe₂-based devices.

Conclusions:

• Inductively coupled plasma treatment offers a scalable route for PtSe₂ thickness control.
• Homogeneous PtSe₂ metal/semiconductor structures are viable for high-performance electronics.
• The developed method and device show significant promise for future electronic applications.