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InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on
Ali Jaffal1, Walid Redjem, Philippe Regreny
1Université de Lyon, Institut des Nanotechnologies de Lyon, UMR 5270 CNRS, INSA de Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne cedex, France. ali.jaffal@insa-lyon.fr.
Nanoscale
|November 8, 2019
Summary
We developed tapered indium arsenide/indium phosphide quantum dot-nanowires grown on silicon for secure, long-distance communication. These nanowires demonstrate single photon emission in the telecom band, crucial for integrated photonic circuits.
Area of Science:
- Materials Science
- Quantum Optics
- Nanotechnology
Background:
- Integrated photonic devices are crucial for secure communication over long distances.
- Silicon-based photonics requires compatible single photon sources operating in the telecom band.
- Indium arsenide/indium phosphide quantum dots offer potential for single photon emission.
Purpose of the Study:
- To achieve monolithic growth of tapered indium arsenide/indium phosphide quantum dot-nanowires (QD-NWs) on silicon substrates.
- To investigate the effect of nanowire taper angle on the emission properties of QD-NWs.
- To develop a CMOS-compatible single photon source for secure communication.
Main Methods:
- Monolithic growth of needlelike tapered InAs/InP QD-NWs on silicon using gold-catalyzed molecular beam epitaxy.
- Controlled balance of axial and radial growth to achieve desired NW geometry.
- Characterization of optical emission properties, including far-field profile and single photon statistics.
Main Results:
- Demonstrated a Gaussian far-field emission profile in the telecom O-band (30° divergence) at room temperature for a 2° tapered NW.
- Observed single photon emission at cryogenic temperatures for off-resonant excitation.
- Achieved a second-order photon correlation value g2(0) = 0.05 for a 7° tapered NW, indicating high-quality single photon emission.
Conclusions:
- The controlled growth of tapered InAs/InP QD-NWs on silicon is feasible.
- Nanowire geometry, specifically the taper angle, significantly impacts emission properties.
- This work presents a promising pathway towards efficient, monolithic silicon-based single photon sources for quantum communication.
