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Impact of Symmetry on Anisotropic Magnetoresistance in Textured Ferromagnetic Thin Films
A Philippi-Kobs1,2, A Farhadi2, L Matheis2
1Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, 22607 Hamburg, Germany.
Abstract:
We report on the magnetoresistance of textured films consisting of 3d-ferromagnetic layers sandwiched by Pt. While the conventional cos^{2}φ behavior of the anisotropic magnetoresistance (AMR) is found when the magnetization M is varied in the film plane, cos^{2n}θ contributions (2n≤6) exist for rotating M in the plane perpendicular to the current. This finding is explained by the symmetry-adapted modeling of AMR of textured films demonstrating that the cos^{2}θ behavior cannot be used as a fingerprint for the presence of spin Hall magnetoresistance (SMR). Further, the interfacial MR contributions for Pt/Ni/Pt contradict the SMR behavior confirming the dominant role of AMR in all-metallic systems.
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