Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

5.8K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.8K
MOS Capacitor01:25

MOS Capacitor

1.4K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.4K
Gauss's Law in Dielectrics01:17

Gauss's Law in Dielectrics

5.0K
Consider a polar dielectric placed in an external field. In such a dielectric, opposite charges on adjacent dipoles neutralize each other, such that the net charge within the dielectric is zero. When a polar dielectric is inserted in between the capacitor plates, an electric field is generated due to the presence of net charges near the edge of the dielectric and the metal plates interface. Since the external electrical field merely aligns the dipoles, the dielectric as a whole is neutral. An...
5.0K
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

4.8K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
4.8K
Spherical and Cylindrical Capacitor01:26

Spherical and Cylindrical Capacitor

6.6K
A spherical capacitor consists of two concentric conducting spherical shells of radii R1 (inner shell) and R2 (outer shell). The shells have  equal and opposite charges of +Q and −Q, respectively. For an isolated conducting spherical capacitor, the radius of the outer shell can be considered to be infinite.
Conventionally, considering the  symmetry, the electric field between the concentric shells of a spherical capacitor is directed radially outward. The magnitude of the field,...
6.6K
P-N junction01:11

P-N junction

1.1K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Distal arthrogryposis with impaired proprioception and touch: description of 9 additional cases harbouring novel PIEZO2 variants and literature review.

European journal of paediatric neurology : EJPN : official journal of the European Paediatric Neurology Society·2026
Same author

Reversible control over the distribution of chemical inhomogeneities in multiferroic BiFeO<sub>3</sub>.

Nature communications·2025
Same author

Comparative effectiveness and cost-effectiveness of natalizumab and fingolimod in rapidly evolving severe relapsing-remitting multiple sclerosis in the United Kingdom.

Journal of medical economics·2023
Same author

Drug development and novel therapeutics to ensure a personalized approach in the treatment of systemic sclerosis.

Expert review of clinical immunology·2023
Same author

PD-L1 expression, BRAF and TERT mutation in a cohort of aggressive thyroid cancers: case series from a single-centre experience.

Journal of endocrinological investigation·2023
Same author

Corrigendum to "Impact of hemoglobin levels at admission on outcomes among elderly patients with acute coronary syndrome treated with low-dose Prasugrel or clopidogrel: A sub-study of the ELDERLY ACS 2 trial" [Int J Cardiol. 2022 Dec 15;369:5-11].

International journal of cardiology·2023

Related Experiment Video

Updated: Jan 4, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K

Depolarizing-Field Effects in Epitaxial Capacitor Heterostructures.

N Strkalj1, G De Luca1, M Campanini2

  • 1Department of Materials, ETH Zurich, CH-8093 Zürich, Switzerland.

Physical Review Letters
|November 9, 2019
PubMed
Summary

We found that during the growth of metal-ferroelectric-metal capacitors, the ferroelectric material can break into domains due to poor charge screening. Thermal annealing can restore the desired single-domain state.

More Related Videos

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.6K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.0K

Related Experiment Videos

Last Updated: Jan 4, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.6K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.0K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Solid State Chemistry

Background:

  • Metal-ferroelectric-metal (MFM) capacitors are crucial for electronic devices.
  • Understanding interface effects is key to controlling ferroelectric properties.
  • BaTiO3 and SrRuO3 are prototypical materials for studying these phenomena.

Purpose of the Study:

  • To investigate the transient electrostatic effects during the growth of BaTiO3/SrRuO3 MFM systems.
  • To understand the cause of ferroelectric domain breakdown in the early growth stages.
  • To demonstrate a method for recovering the single-domain ferroelectric state.

Main Methods:

  • In situ monitoring of polarization state using optical second harmonic generation.
  • Fabrication of epitaxial BaTiO3/SrRuO3 metal-ferroelectric-metal structures.
  • Controlled thermal annealing procedures.

Main Results:

  • A transient enhancement of the depolarizing field was observed, leading to a quench of net polarization.
  • Reduced conductivity in the early SrRuO3 growth stage caused ferroelectric BaTiO3 breakdown into domains.
  • Thermal annealing successfully recovered the single-domain state.

Conclusions:

  • Interface electrostatic effects significantly impact ferroelectric behavior during MFM device fabrication.
  • Charge screening efficiency is critical for maintaining ferroelectricity in thin films.
  • Thermal annealing is an effective post-processing technique to correct domain instability.