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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
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Separating Electrons and Donors in BaSnO3 via Band Engineering
Abhinav Prakash1, Nicholas F Quackenbush2, Hwanhui Yun1
1Department of Chemical Engineering and Materials Science , University of Minnesota , Minneapolis , Minnesota 55414 , United States.
Nano Letters
|November 9, 2019
Summary
Researchers achieved modulation doping in lanthanum-doped barium stannate (BaSnO3), a high-mobility perovskite oxide semiconductor, without using strontium titanate (SrTiO3). This breakthrough enables new pathways for two-dimensional electron gas engineering.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Semiconductor Physics
Background:
- La-doped BaSnO3 is a perovskite oxide semiconductor with high room-temperature electron mobility.
- Achieving two-dimensional electron gas (2DEG) in perovskite oxides is crucial for advanced electronic applications.
- Previous research predominantly utilized SrTiO3-based heterostructures.
Purpose of the Study:
- To demonstrate modulation doping in BaSnO3 as a high-mobility host without SrTiO3.
- To investigate the interface properties and electron distribution in BaSnO3 heterostructures.
- To explore methods for engineering 2DEG density in BaSnO3.
Main Methods:
- Fabrication of heterostructures using BaSnO3 as the active layer.
- Angle-resolved hard X-ray photoelectron spectroscopy (HAXPES) for interface analysis.
- Self-consistent solution of 1D Poisson and Schrödinger equations for theoretical validation.
Main Results:
- Successful demonstration of modulation doping in BaSnO3 without SrTiO3.
- HAXPES non-destructively determined electron location and quantified electron distribution width at buried interfaces.
- Transport measurements aligned with theoretical calculations.
Conclusions:
- Modulation doping in BaSnO3 offers a promising route for high-mobility 2DEG.
- HAXPES is a powerful tool for characterizing buried interfaces in oxide heterostructures.
- Band-offset engineering provides a mechanism to control 2DEG density in BaSnO3 systems.
Keywords:
Modulation dopingalkaline-earth stannateband alignmentcharge transfertransparent conductorwide band gap materialMore Related Videos
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