Related Experiment Video
Updated: Jan 4, 2026

Fabrication of Periodic Gold Nanocup Arrays Using Colloidal Lithography
Published on: September 2, 2017
Dewetting Metal Nanofilms-Effect of Substrate on Refractive Index Sensitivity of Nanoplasmonic Gold
Nikhil Bhalla1, Aditya Jain2, Yoonjoo Lee3
1Nanotechnology and Integrated Bioengineering Centre (NIBEC), School of Engineering, Ulster University, Shore Road, Jordanstown BT37 0QB, Northern Ireland, UK.
Abstract:
The localized surface plasmon resonance (LSPR) sensitivity of metal nanostructures is strongly dependent on the interaction between the supporting substrate and the metal nanostructure, which may cause a change in the local refractive index of the metal nanostructure. Among various techniques used for the development of LSPR chip preparation, solid-state dewetting of nanofilms offers fast and cost effective methods to fabricate large areas of nanostructures on a given substrate. Most of the previous studies have focused on the effect of the size, shape, and inter-particle distance of the metal nanostructures on the LSPR sensitivity. In this work, we reveal that the silicon-based supporting substrate influences the LSPR associated refractive index sensitivity of gold (Au) nanostructures designed for sensing applications. Specifically, we develop Au nanostructures on four different silicon-based ceramic substrates (Si, SiO2, Si3N4, SiC) by thermal dewetting process and demonstrate that the dielectric properties of these ceramic substrates play a key role in the LSPR-based refractive index (RI) sensitivity of the Au nanostructures. Among these Si-supported Au plasmonic refractive index (RI) sensors, the Au nanostructures on the SiC substrates display the highest average RI sensitivity of 247.80 nm/RIU, for hemispherical Au nanostructures of similar shapes and sizes. Apart from the significance of this work towards RI sensing applications, our results can be advantageous for a wide range of applications where sensitive plasmonic substrates need to be incorporated in silicon based optoelectronic devices.

