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Sub-60 mV per decade switching in ion-gel-gated In-Sn-O transistors with a nano-thick charge trapping layer

Wanrong Liu1, Jia Sun, Weijie Qiu

  • 1Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China. jiasun@csu.edu.cn junliang.yang@csu.edu.cn.

Nanoscale
|November 14, 2019
PubMed

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