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Updated: Jan 3, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
A high performance electroformed single-crystallite VO2 threshold switch
Xin Zhou1, Deen Gu1, Yatao Li1
1School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China. gudeen@uestc.edu.cn jiangyd@uestc.edu.cn.
Abstract:
Threshold switches (TSs) are an effective approach for resolving the sneak path problem within a memristor array. VO2 is a promising material for fabricating high-performance TSs. Here we report a single crystal VO2-based TS device with high switching performance. The single crystal monoclinic VO2 channel is obtained by electroforming in a composite vanadium oxide film consisting of VO2, V2O5 and V3O7. The formation mechanism on single crystal VO2 is thoroughly investigated by means of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The single crystal VO2-based TS device exhibits better switching performance than the polycrystalline monoclinic VO2 counterpart. The TS device based on a single crystal channel with the (2[combining macron]11) orientation exhibits a steep turn-on voltage slope of <0.5 mV dec-1, a fast switching speed of 23 ns, an excellent endurance over 109 cycles, a high Ion/Ioff ratio of 143 and a low sample-to-sample variance. The enhanced switching performance originates from the single crystal feature and specified crystal orientation.
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