Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

1.1K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.1K
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

841
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
841
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

502
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
502

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

High-Resolution Cathodoluminescence Mapping for Doping Quantification across a Wide Range of Silicon Concentrations in GaN Epitaxial Layers.

Nano letters·2026
Same author

Flexible and Stretchable UV-B Light-Emitting Diodes.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Exploring Plant Surface Chemical Variability: Lettuce Leaf as Model.

Physiologia plantarum·2025
Same author

Impact of electron beam propagation on high-resolution quantitative chemical analysis of 1-nm-wide GaN/AlGaN quantum wells.

Ultramicroscopy·2025
Same author

Large On-Off Enhancement of Au Nanocatalyst Contacts to ZnO Nanowires with Bulk and Surface Oxygen Modification.

ACS applied materials & interfaces·2025
Same author

Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy.

Nanotechnology·2024

Related Experiment Video

Updated: Jan 3, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

9.0K

Mg and In Codoped p-type AlN Nanowires for pn Junction Realization.

Alexandra-Madalina Siladie1, Gwénolé Jacopin2, Ana Cros3

  • 1IRIG-PHELIQS, NPSC , University Grenoble Alpes, CEA , 38000 Grenoble , France.

Nano Letters
|November 15, 2019
PubMed
Summary
This summary is machine-generated.

Researchers developed mercury-free deep ultraviolet (DUV) light-emitting diodes (LEDs) using aluminum nitride nanowires. Mg/In codoping and electron irradiation significantly improved p-type doping, enhancing DUV LED efficiency for applications like water purification.

Keywords:
Aluminium nitride nanowiresRaman spectroscopycodopingdopingelectron beam induced currentmagnesium incorporation

More Related Videos

Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization
07:14

Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization

Published on: October 6, 2019

8.8K
Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
08:07

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

15.5K

Related Experiment Videos

Last Updated: Jan 3, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

9.0K
Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization
07:14

Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization

Published on: October 6, 2019

8.8K
Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
08:07

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

Published on: June 18, 2013

15.5K

Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Deep ultraviolet (DUV) light-emitting diodes (LEDs) are critical for applications like water purification.
  • Al-rich AlGaN-based DUV LEDs suffer from poor p-type doping and current injection, limiting their efficiency.
  • Mercury-free DUV LED development presents a significant scientific challenge.

Purpose of the Study:

  • To enhance p-type doping in aluminum nitride (AlN) nanowires (NWs) for efficient DUV LEDs.
  • To overcome limitations in AlGaN-based DUV LED technology.
  • To enable high-efficiency NW-based LEDs in the DUV spectrum.

Main Methods:

  • Utilized magnesium (Mg)/indium (In) codoping in AlN nanowires.
  • Achieved enhanced Mg solubility limit through codoping.
  • Applied electron irradiation for optimal electrical activation of acceptor impurities.
  • Investigated tunnel conduction through the AlN NW p-n junction.

Main Results:

  • Achieved an order of magnitude higher Mg solubility limit in AlN NWs via Mg/In codoping.
  • Demonstrated optimal electrical activation of acceptor impurities through electron irradiation.
  • Observed tunnel conduction across the AlN NW p-n junction.
  • Proposed a theoretical model for enhanced Mg incorporation involving In-vacancy complexes.

Conclusions:

  • Mg/In codoping and electron irradiation significantly improve AlN p-doping.
  • The developed method paves the way for highly efficient, mercury-free DUV LEDs.
  • Enhanced Mg incorporation is facilitated by In-vacancy complex ionization and Mg's negative charge.