Related Experiment Video
Updated: Jan 3, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
Published on: November 16, 2018
Preparation of Low-Resistance and Residue-free ITO Films for Large-scale 3D Displays
Zhiqiang Zhang1,2, Xiang Yu1, Wenjing Zhao1
1Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes National Laboratory of Mineral, Materials School of Materials Science and Technology , China University of Geosciences , Beijing 100083 , China.
Abstract:
The large-sized naked-eye three-dimensional (3D) display is a critical device in the real-time topographic survey for deep-sea scientific research. As a core component, the low-impedance transparent conductive indium tin oxide (ITO) thin-film electrode lacks a reliable industrial preparation method. In the 3D display, the grating element with a low-resistance ITO film electrode should have a good binocular parallax to drive the display favorably. However, an increase in the ITO film temperature during deposition may induce its crystallization, and its etching residue may cause a short circuit between the ITO electrodes and abnormal display operation. In this work, we propose a simple and straightforward technique to produce amorphous thin ITO films by controlling the water vapor flow rate during the deposition process. The obtained ITO amorphous thick film (300 nm) can be etched without leaving residues on the display surface, ensuring vivid display performance of the 3D display. A field test employing the 3D display, consisting of a 3D parallax barrier and a two-dimensional (2D) display, does not exhibit a short-circuit phenomenon caused by residues encountered in previous devices. This work makes the 3D display applicable for the real-time topographic survey on the basis of both satisfying the nonetching residue and the decrease of the resistance value.

