Nonvolatile Balanced Ternary Memory Based on The Multiferroelectric Material GeSnTe₂

Area of Science:

• Materials Science
• Computer Engineering
• Solid State Physics

Background:

• Modern computing relies on binary logic, but its development is slowing.
• Multivalued logic (MVL) systems offer potential for denser, lower-cost, and more power-efficient computing.
• Existing MVL implementations face challenges in scalability and nonvolatility.

Purpose of the Study:

• To propose a novel nonvolatile balanced ternary memory device.
• To explore the potential of the multiferroelectric material GeSnTe2 for MVL applications.
• To demonstrate the feasibility of nanoscale data storage using stable electric polarization.

Main Methods:

• Theoretical investigation of atomic-thick two-dimensional GeSnTe2 structures.
• Analysis of stable electric polarization states (direction and quantity).
• Modeling of balanced ternary data representation {-1, 0, +1} within the material.

Main Results:

• Identified two stable, distinct electric polarization states in 2D GeSnTe2.
• Demonstrated the possibility of implementing a balanced ternary data set {-1, 0, +1} at the nanometer scale.
• Proposed a one-shot read/write mechanism for the memory device.

Conclusions:

• GeSnTe2 is a promising multiferroelectric material for next-generation nonvolatile balanced ternary memory.
• The proposed device offers a pathway to denser logic and reduced power consumption in computing.
• Nanoscale implementation of MVL is achievable using tailored 2D materials.