Related Experiment Video
Updated: Jan 3, 2026

10:17
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
11.9K
From CuFeS2 to Ba6Cu2FeGe4S16: rational band gap engineering achieves large second-harmonic-generation together with
Wangzhu Cao1, Dajiang Mei, Yi Yang
1College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620, China. meidajiang718@pku.edu.cn.
Abstract:
A new germanium-based sulfide, Ba6Cu2FeGe4S16, achieves a band-gap broadening of more than 1 eV relative to CuFeS2. Remarkably, Ba6Cu2FeGe4S16 exhibits excellent comprehensive NLO performance (SHG, 1.5 × AgGaSe2; LDT, 2 × AgGaSe2), satisfying the essential requirements of mid-IR NLO candidates.
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