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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

841
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
841
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

502
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
502

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Interfacial Defect-Mediated Near-Infrared Silicon Photodetection with Metal Oxides.

Jongbum Kim1, Lisa J Krayer, Joseph L Garrett

  • 1Department of Electrical and Computer Engineering , University of California , Davis , California 95616 , United States.

ACS Applied Materials & Interfaces
|November 20, 2019
PubMed
Summary
This summary is machine-generated.

Researchers developed novel silicon (Si) photodiodes for telecommunications using aluminum-doped zinc oxide (AZO) films. These devices enable cost-effective, broad-band near-infrared photodetection by leveraging interface and bulk defects in silicon.

Keywords:
hot carrierinterface defectmetal oxidephotodiodesilicon photonics

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Area of Science:

  • Photonics and Optoelectronics
  • Materials Science
  • Semiconductor Physics

Background:

  • Silicon photonics is crucial for next-generation telecommunication systems.
  • Sub-band-gap photodetection in silicon (Si) is essential for integrated photonic devices.
  • Cost-effective integration demands CMOS-compatible materials for Si-based photodetection.

Purpose of the Study:

  • To achieve broad-band near-infrared photodetection in Si using metal-oxide Schottky junctions.
  • To investigate photocurrent generation from interface defects induced by aluminum-doped zinc oxide (AZO) films on Si.
  • To analyze the contributions of interface and bulk defect states to photodetection.

Main Methods:

  • Fabrication of Si/metal-oxide Schottky junctions using AZO films on Si substrates.
  • Characterization of photodetection performance across a broad near-infrared spectrum.
  • Quantitative analysis of photoexcited carrier generation using the Fowler equation for photoemission.
  • Demonstration of a gold-nanoparticle-coated photodiode with multiple photocurrent responses.

Main Results:

  • Achieved broad-band near-infrared photodetection with a photoresponse of 1 mA/W at 1325 nm and 0.22 mA/W at 1550 nm under zero-biasing.
  • Identified photocurrent generation from both interface defects (AZO/Si) and intrinsic Si bulk defect states.
  • Quantitatively determined the individual contributions of these defect states to the photoresponse.
  • Demonstrated a photodiode with three distinct photocurrent responses (hot carriers, interface defects, bulk defects).

Conclusions:

  • AZO-induced interface defects in Si/metal-oxide Schottky junctions enable effective sub-band-gap photodetection.
  • The developed photodiodes offer a promising pathway for cost-effective, integrated photonic devices in telecommunications.
  • Understanding defect contributions allows for tailored photodiode designs, with hot carrier response dominating near the Si band gap and interface defects at longer wavelengths.