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Related Concept Videos

P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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Related Experiment Video

Updated: Jan 3, 2026

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity
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Unveiling Defect-Mediated Charge-Carrier Recombination at the Nanometer Scale in Polycrystalline Solar Cells.

Yohan Yoon1,2, Wei-Chang D Yang1,2, Dongheon Ha1,2

  • 1Physical Measurement Laboratory , National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States.

ACS Applied Materials & Interfaces
|November 21, 2019
PubMed
Summary

Grain boundaries in polycrystalline solar cells have complex effects. This study uses two nanoscale techniques to reveal how these boundaries impact photocurrent and light emission, offering insights into improving solar cell efficiency.

Keywords:
CdTecathodoluminescencegrain boundariesnanoscale electronic structurenear-field scanning photocurrent microscopyscanning transmission electron microscope

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Renewable Energy

Background:

  • Polycrystalline thin-film solar cells can exceed single-crystalline performance despite grain boundaries (GBs).
  • Understanding the local impact of GBs is crucial for optimizing solar cell efficiency.
  • Characterizing GBs requires high spatial resolution techniques.

Purpose of the Study:

  • To investigate the nanoscale effects of grain boundaries (GBs) on Cadmium Telluride (CdTe) solar cells.
  • To compare and contrast information obtained from different nanoscale characterization techniques.
  • To elucidate the mechanisms behind GB influence on photovoltaic performance.

Main Methods:

  • Utilized near-field scanning photocurrent microscopy (NSPM) for photocurrent mapping.
  • Employed scanning transmission electron microscope based cathodoluminescence spectroscopy (STEM-CL) for optical property analysis.
  • Applied numerical simulations and analytical models to quantify GB effects.

Main Results:

  • NSPM showed increased photocurrent at GBs, while STEM-CL indicated reduced CL intensity and spectral redshifts at GBs.
  • Observed reversed signal contrast between grain interiors and GBs depending on the technique used.
  • Attributed findings to non-radiative recombination and band bending at GBs.

Conclusions:

  • Combined NSPM and STEM-CL provide complementary insights into GB behavior in CdTe solar cells.
  • GBs influence photocurrent and luminescence through complex defect-mediated processes.
  • Developed a method to quantify GB recombination velocity for evaluating polycrystalline solar cells.