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An Ultraviolet Sensor and Indicator Module Based on p-i-n Photodiodes
Yu-Chieh Chiu1, Pinghui Sophia Yeh1,2, Tzu-Hsun Wang1
1Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan.
Sensors (Basel, Switzerland)
|November 27, 2019
Summary
This study presents a cost-effective, monolithic ultraviolet (UV) sensor and warning lamp. The device integrates p-i-n (PIN) photodiodes with a transimpedance amplifier and a visible LED indicator, offering enhanced UV detection capabilities.
Area of Science:
- Optoelectronics
- Semiconductor Devices
- UV Sensing Technology
Background:
- Hybrid UV sensor and warning lamp systems are bulky and expensive.
- Monolithic integration offers advantages in size, cost, and performance.
Purpose of the Study:
- To develop a cost-effective, monolithic module integrating an ultraviolet (UV) sensor and a warning lamp.
- To demonstrate the feasibility of simultaneous fabrication of Gallium Nitride (GaN)-based light-emitting diodes (LEDs) and p-i-n (PIN) photodiodes.
- To evaluate the performance of the integrated UV sensor indicator device.
Main Methods:
- Fabrication of GaN-based LEDs with an indium-tin oxide (ITO) layer and PIN photodiodes without ITO.
- Simultaneous fabrication of both photodiodes and LEDs on a single substrate.
- Characterization of photodiodes' responsivity at UV wavelengths (381 nm and 350 nm) under a 5 V bias.
- Measurement of photocurrent-to-voltage conversion and LED driving.
- Analysis of epitaxial structural effects on photocurrent collection efficiency.
- Assessment of crosstalk between PIN photodiodes and LEDs.
Main Results:
- Achieved significantly higher incident photon-to-electron conversion efficiencies in PIN photodiodes compared to reverse-biased LEDs at UV wavelengths.
- Demonstrated responsivities of 0.20 A/W at 381 nm and 0.16 A/W at 350 nm with a 5 V bias.
- Developed a functional indicator where LED brightness correlates with ambient UV intensity.
- Identified epitaxial structural factors influencing UV photocurrent collection.
- Quantified crosstalk between photodiodes and LEDs at varying distances.
Conclusions:
- Monolithic integration of UV sensors and warning lamps is feasible and advantageous over hybrid systems.
- The developed GaN-based PIN photodiode and LED module offers efficient UV detection and indication.
- Optimizing epitaxial structures is crucial for maximizing UV sensing performance.
- The device shows potential for cost-effective UV monitoring applications.
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