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Contact engineering high-performance ambipolar multilayer tellurium transistors.

Fanglu Qin1, Yunxia Hu2, PingAn Hu2

  • 1College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin, 150040, People's Republic of China.

Nanotechnology
|November 27, 2019
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Summary

High-performance ambipolar field-effect transistors (FETs) were fabricated using multilayer tellurium (Te) nanosheets and low work function scandium contacts. This demonstrates effective contact engineering for tuning Te electronic properties and enabling potential digital circuit applications.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Multilayer tellurium (Te) nanosheets exhibit promising electronic transport and air stability.
  • Previous studies primarily reported p-type behavior in multilayer Te devices.
  • Theoretical work suggests contact engineering can modulate Te electronic properties.

Purpose of the Study:

  • To investigate the effect of contact engineering on multilayer Te nanosheet electronic properties.
  • To achieve high-performance ambipolar behavior in multilayer Te field-effect transistors (FETs).
  • To demonstrate the potential of multilayer Te for digital circuit applications.

Main Methods:

  • Fabrication of multilayer Te field-effect transistors (FETs).
  • Utilized low work function scandium (Sc) as contact metal.
  • Characterized device performance and transport properties.

Main Results:

  • Achieved high-performance ambipolar multilayer Te FETs using Sc contacts (work function 3.58 eV).
  • Demonstrated high electron mobility (489 cm2V-1s-1) and hole mobility (648 cm2V-1s-1).
  • Observed typical p-type behavior with large work function Cr contacts (4.5 eV).

Conclusions:

  • Low work function metal contacts, like Sc, enable ambipolar transport in multilayer Te FETs.
  • Contact engineering is a viable strategy to tune the electrical properties of multilayer Te.
  • Ambipolar multilayer Te FETs open possibilities for designing novel digital circuits.