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Simulation of traveling interface pulses in bistable surface reactions
Alexei Makeev1, Ronald Imbihl2
1Faculty of Computational Mathematics and Cybernetics, Lomonosov Moscow State University, Moscow, Russian Federation.
Abstract:
A couple of bistable oxidation reactions on Rh(110), the CH_{3}OH+O_{2} and the NH_{3}+O_{2} reactions, exhibit localized excitations at the interface between oxygen-poor and oxygen-rich phase that propagate in a pulselike manner along the interface. A three-variable reaction-diffusion model is set up based on a mechanism that explains the localized excitations as being caused by temporary structural defects generated in the vicinity of the interface. The structural defects are a consequence of different densities of surface atoms in the oxygen-induced reconstruction phases and in the nonreconstructed (1×1) phase. One- and two-dimensional simulations show that traveling interface pulses (TIPs) exist in a region of so-called double metastability adjacent to the equistability point of the bistable system. As in the experiment, we observe triangular-shaped TIPs that move fast along the interface. Diffusional anisotropy is not required for the occurrence of TIPs. All essential features of the experiment are reproduced by the simulations.
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