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Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3

Jung Sub Lee1, Tae Young Ahn1, Daewon Kim2

  • 1Department of Orthopaedic Surgery and Medical Research Institute, Pusan National University Hospital, 179 Gudeok-ro, Seo-gu, Busan 49241, Korea.

Materials (Basel, Switzerland)
|December 1, 2019
PubMed

Keywords:
(NH4)2SIII–V semiconductorindium phosphide (InP), Al2O3sulfur passivation

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