Direct Electrohydrodynamic Patterning of High-Performance All Metal Oxide Thin-Film Electronics

In this paper, we propose a scalable approach toward all-printed high-performance metal oxide thin-film transistors (TFTs), using a high-resolution electrohydrodynamic (EHD) printing process. Direct EHD micropatterning of metal oxide TFTs is based on diverse precursor solutions to form semiconducting materials (In₂O₃, In-Ga-ZnO (IGZO)), conductive metal oxide (Sn-doped In₂O₃ (ITO)), as well as aluminum oxide (Al₂O₃) gate dielectric at low temperatures. The fully printed TFT devices exhibit excellent electron transport characteristics (average electron mobilities of up to 117 cm² V^-1 s^-1), negligible hysteresis, excellent uniformity, and stable operation at low-operating voltage. Furthermore, integrated logic gates such as NOT and NAND have been printed and demonstrated. All-printed logic with individual gating and symmetric input/output behavior, which is crucial for large-scale integration, is also demonstrated. The devices and fabrication process described in this paper enable high-performance and high-reliability transparent electronics.