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Pressure-induced topological phase transition in noncentrosymmetric elemental tellurium
Toshiya Ideue1, Motoaki Hirayama2, Hiroaki Taiko3
1Quantum-Phase Electronics Center, The University of Tokyo, 113-8656 Tokyo, Japan; ideue@ap.t.u-tokyo.ac.jp.
Abstract:
Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by external field is of particular interest from both fundamental and technological viewpoints. Here we report possible signatures of the pressure-induced topological phase transition from a semiconductor to a Weyl semimetal in elemental tellurium probed by transport measurements. Pressure variation of the periods of Shubnikov-de Haas oscillations, as well as oscillation phases, shows an anomaly around the pressure theoretically predicted for topological phase transition. This behavior is consistent with the pressure-induced band deformation and resultant band-crossing effect. Moreover, effective cyclotron mass is reduced toward the critical pressure, potentially reflecting the emergence of massless linear dispersion. The present result paves the way for studying the electronic band topology in well-known compounds and topological phase transition by the external field.
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