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Tunable Anelasticity in Amorphous Si Nanowires.
Yuecun Wang1, Beiming Liang1, Shuigang Xu2
1Center for Advancing Materials Performance from the Nanoscale (CAMP-NANO) and Hysitron Applied Research Center in China (HARCC), State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , P. R. China.
Nano Letters
|December 6, 2019
Summary
Amorphous silicon nanowires exhibit different elastic behaviors based on their initial shape. Curved silicon nanowires show anelasticity due to structural changes, suggesting potential for nanoscale damping applications.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Amorphous silicon nanowires (a-Si NWs) are explored for nanoscale applications.
- Understanding their mechanical properties, particularly elastic behavior, is crucial for device integration.
Purpose of the Study:
- To investigate the in situ bending behavior of amorphous silicon nanowires.
- To elucidate the underlying mechanisms of observed elastic deformation.
- To explore the potential of a-Si NWs in nanoscale damping systems.
Main Methods:
- In situ bending tests on amorphous silicon nanowires.
- Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy (STEM-EELS) analysis.
- Focused ion beam (FIB) irradiation for structural modification.
Main Results:
- Axially straight a-Si NWs exhibit pure elastic deformation.
- Axially curved a-Si NWs display anelastic behavior when bent along their original curvature.
- Anelasticity is attributed to bond-switching assisted structural redistribution under stress.
- FIB irradiation induces similar anelasticity in initially straight NWs.
Conclusions:
- The anelastic behavior in a-Si NWs is linked to structural inhomogeneity and stress-induced bond switching.
- Anelasticity can be tuned by altering NW morphology, loading direction, or ion beam irradiation.
- Amorphous silicon nanowires show promise for nanoscale damping systems and semiconductor nanodevices.
