The Growth of Ga₂O₃ Nanowires on Silicon for Ultraviolet Photodetector

We investigated the effect of silver catalysts to enhance the growth of Ga₂O₃ nanowires. The growth of Ga₂O₃ nanowires on a P⁺-Si (100) substrate was demonstrated by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of a thin silver film that serves as a catalyst layer. We present the results of morphological, compositional, and electrical characterization of the Ga₂O₃ nanowires, including the measurements on photoconductance and transient time. Our results show that highly oriented, dense and long Ga₂O₃ nanowires can be grown directly on the surface of silicon. The Ga₂O₃ nanowires, with their inherent n-type characteristics formed a pn heterojunction when grown on silicon. The heterojunction showed rectifying characteristics and excellent UV photoresponse.