Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

838
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
838

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Repeated evolution of cooperative breeding and life history traits in Lake Tanganyika cichlids.

Communications biology·2026
Same author

Onion Skin Pattern of Facial Sensory Loss in Central Pontine Hemorrhage.

The Neurohospitalist·2025
Same author

Painless Aortic Dissection With Bradycardia, Hypotension, and Lower Limb Weakness: A Case Report.

Cureus·2025
Same author

Epilepsy in dentatorubral-pallidoluysian atrophy: A systematic review and meta-analysis.

Epilepsia·2025
Same author

Modified Atkins Diet therapy during pregnancy for refractory idiopathic generalized epilepsy.

Epilepsy & behavior reports·2025
Same author

RNF213 Acts as a Molecular Switch for Cav-1 Ubiquitination and Phosphorylation in Human Cells.

Cells·2025

Related Experiment Video

Updated: Jan 2, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

10.2K

Wavelength-Conversion-Material-Mediated Semiconductor Wafer Bonding for Smart Optoelectronic Interconnects.

Kodai Kishibe1, Soichiro Hirata1, Ryoichi Inoue1

  • 1Department of Chemical Engineering, Kyoto University, Kyoto 615-8510, Japan.

Nanomaterials (Basel, Switzerland)
|December 11, 2019
PubMed
Summary

A novel semiconductor wafer bonding method uses optical wavelength conversion materials for simultaneous bonding and interface functionalization. This cost-effective, room-temperature process enhances optoelectronic device performance and flexibility.

Keywords:
frequency conversioninterfaceoptoelectronicsphotonic devicephotonic integrated circuitsemiconductorsolar cellwafer bonding

More Related Videos

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

7.6K
Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.8K

Related Experiment Videos

Last Updated: Jan 2, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
10:32

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Published on: January 9, 2014

10.2K
A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

7.6K
Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.8K

Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Manufacturing

Background:

  • Traditional semiconductor wafer bonding can be complex and energy-intensive.
  • Integrating functionalities at the interface often requires separate fabrication steps.
  • Optimizing light absorption in optoelectronic devices necessitates tailored spectral responses.

Purpose of the Study:

  • To introduce a new semiconductor wafer bonding technique.
  • To achieve simultaneous bond formation and interfacial function generation.
  • To demonstrate the application of this method in enhancing optoelectronic devices.

Main Methods:

  • Developing a bonding scheme using an adhesive viscous organic matrix with embedded fluorescent particles.
  • Utilizing optical wavelength conversion materials for interfacial engineering.
  • Performing bonding in ambient air at room temperature.

Main Results:

  • Successful demonstration of simultaneous semiconductor wafer bonding and wavelength conversion (UV to visible).
  • Verification of high mechanical stability and electrical conductivity at the bonded interfaces.
  • Confirmation of versatility for practical applications in optoelectronics.

Conclusions:

  • The proposed bonding and interfacial scheme offers a cost-effective and efficient approach for device manufacturing.
  • This method improves the performance and structural flexibility of optoelectronic devices like solar cells and photonic integrated circuits.
  • The ability to tailor spectral light incidence enhances photovoltaic efficiency and photonic device functionality.