Solution-Processed, Electrolyte-Gated In₂O₃ Flexible Synaptic Transistors for Brain-Inspired Neuromorphic...

Area of Science:

• Materials Science
• Neuroscience
• Electrical Engineering

Background:

• Brain-inspired neuromorphic systems require efficient emulation of synaptic behaviors.
• Developing synaptic transistors via solution processes remains a challenge.

Purpose of the Study:

• To fabricate indium oxide synaptic transistors using a low-temperature, solution-based method.
• To investigate the effect of annealing time on device performance.
• To demonstrate the emulation of synaptic behaviors using these transistors.

Main Methods:

• Indium oxide synaptic transistors fabricated on polyimide substrates using a water-inducement method at low temperatures.
• Utilized lithium perchlorate dissolved in polyethylene oxide as the gate electrolyte.
• Investigated the impact of annealing time and temperature on electrical properties.

Main Results:

• Achieved comparable electrical properties by prolonging annealing time instead of high-temperature annealing.
• Demonstrated high electrical performance and good mechanical stability in transistors annealed at 200 °C.
• Successfully mimicked synaptic behaviors including excitatory postsynaptic current, paired-pulse facilitation, high-pass filtering, and long-term memory.

Conclusions:

• Solution-processed indium oxide synaptic transistors on polyimide substrates offer a viable route for neuromorphic applications.
• The developed water-inducement method provides a low-temperature fabrication pathway.
• The devices exhibit excellent synaptic emulation capabilities due to ion migration dynamics in the electrolyte.