Related Experiment Video
Updated: Jan 2, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Large amplitude charge noise and random telegraph fluctuations in room-temperature graphene single-electron
Jasper P Fried1, Xinya Bian, Jacob L Swett
1Department of Materials, University of Oxford, Oxford, OX1 3PH, UK. jasper.fried@materials.ox.ac.uk j.mol@qmul.ac.uk.
Abstract:
We analyze the noise in liquid-gated, room temperature, graphene quantum dots. These devices display extremely large noise amplitudes. The observed noise is explained in terms of a charge noise model by considering fluctuations in the applied source-drain and gate potentials. We show that the liquid environment and substrate have little effect on the observed noise and as such attribute the noise to charge trapping/detrapping at the disordered graphene edges. The trapping/detrapping of individual charges can be tuned by gating the device, which can result in stable two-level fluctuations in the measured current. These results have important implications for the use of electronic graphene nanodevices in single-molecule biosensing.
More Related Videos
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Field Effect Transistor
Small-Signal Analysis of MOSFET Amplifiers
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

