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The Material Efforts for Quantized Hall Devices Based on Topological Insulators.

Fucong Fei1, Shuai Zhang1, Minhao Zhang1

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Topological insulators (TIs) enable quantum devices through quantized transport like the quantum Hall effect (QHE) and quantum anomalous Hall effect (QAHE). Research focuses on optimizing TI materials for enhanced surface transport and exploring magnetic TIs for future quantum technologies.

Keywords:
band engineeringmagnetismquantum Hall effectquantum transporttopological insulators

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Physics

Background:

  • Topological insulators (TIs) possess unique band structures and topological quantum effects.
  • Quantized electrical transport, including quantum Hall effect (QHE) and quantum anomalous Hall effect (QAHE), is crucial for TI-based quantum devices.

Purpose of the Study:

  • To review TI material development for quantized transport realization.
  • To examine strategies for improving QHE (surface transport ratio, threshold magnetic field).
  • To discuss the history and recent candidates of magnetic TIs for QAHE.

Main Methods:

  • Review of existing literature on TI material optimization.
  • Analysis of strategies for enhancing QHE.
  • Discussion of magnetic TI candidates and their intrinsic magnetizations.

Main Results:

  • Identified key strategies for increasing surface transport ratio and reducing the magnetic field threshold for QHE.
  • Detailed the evolution of magnetic TIs and highlighted recent candidates with intrinsic magnetization.

Conclusions:

  • Material optimization is essential for achieving quantized transport in TIs.
  • Further research into magnetic TIs holds promise for realizing QAHE and advancing quantum devices.