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Published on: September 26, 2014
Composition dependent structural phase transition and optical band gap tuning in InSe thin films
Harpreet Singh1,2, Palwinder Singh1,2, Randhir Singh3
1Department of Physics, Punjabi University, Patiala, 147 002, Punjab, India.
Indium selenide (InSe) thin films were fabricated, revealing a structural phase transition and a tunable optical band gap. These properties suggest InSe films are promising for diverse technological applications.
Area of Science:
- Materials Science
- Solid State Physics
- Thin Film Technology
Background:
- Indium selenide (InSe) is a semiconductor material with potential applications.
- Controlling the structural and optical properties of InSe thin films is crucial for device fabrication.
Purpose of the Study:
- To investigate the structural and optical properties of indium selenide (InSe) thin films with varying indium content.
- To determine the effect of indium concentration on the phase transition and optical band gap of InSe thin films.
Main Methods:
- Bulk InSe alloys prepared using melt quenching.
- Thin films fabricated via thermal evaporation on glass substrates.
- Structural characterization using X-ray diffraction (XRD) and morphological analysis.
- Optical properties analyzed via transmission measurements and Tauc's plot for band gap determination.
Main Results:
- Amorphous InSe thin films observed for indium content (x) ≤ 40, with crystalline In50Se50 films.
- Structural phase transition detected with increasing indium content, starting around x = 40.
- Significant decrease in optical band gap from 1.88 eV to 1.12 eV with indium content ranging from 5% to 50%.
- In50Se50 films exhibited lower transmission (<30%) compared to other highly transparent films.
Conclusions:
- Indium content significantly influences the structural and optical properties of InSe thin films.
- The observed structural transition and tunable optical band gap highlight the potential of InSe thin films for various technological applications.
- Further research into optimizing InSe thin films for specific applications is warranted.
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