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Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices.

Nishant Saxena1, Christoph Persch2, Matthias Wuttig2

  • 1Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore, 453552, Madhya Pradesh, India.

Scientific Reports
|December 19, 2019
PubMed
Summary

Researchers developed In3SbTe2 (IST) phase-change memory (PCM) devices exhibiting high thermal stability and ultra-fast picosecond switching. This novel material demonstrates potential for next-generation high-speed, non-volatile memory applications.

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