Related Experiment Video
Updated: Jan 1, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices
Nishant Saxena1, Christoph Persch2, Matthias Wuttig2
1Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore, 453552, Madhya Pradesh, India.
Abstract:
Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, a unique property-portfolio of high thermal stability and picosecond threshold switching characteristics in In3SbTe2 (IST) PCM devices. Our experimental findings reveal an improved thermal stability of amorphous IST compared to most other phase change materials. Furthermore, voltage dependent threshold switching and current-voltage characteristics corroborate an extremely fast, yet low electric field threshold switching operation within an exceptionally small delay time of less than 50 picoseconds. The combination of low electric field and high speed switching with improved thermal stability of IST makes the material attractive for next-generation high-speed, non-volatile memory applications.
More Related Videos
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
11:44Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
Published on: August 15, 2014
Related Concept Videos
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Schottky Barrier Diode
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...