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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
Published on: July 8, 2013
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An asymmetric aluminum active quantum plasmonic device
Junais Habeeb Mokkath1, Joel Henzie1
1International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. j.mokath@kcst.edu.kw joelhenzie@protonmail.com.
Physical Chemistry Chemical Physics : PCCP
|December 21, 2019
Summary
Electrical bias reversibly tunes plasmon resonances in asymmetric aluminum nanostructures. Quantum effects and asymmetry are key for active plasmonic devices, enabling broader wavelength tuning.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Plasmonic nanostructures exhibit intense electromagnetic hotspots.
- Electrical manipulation offers reversible control of plasmon resonances via bias voltage.
- Asymmetric nanoparticle dimers model nanoparticle-on-film plasmonic antennas.
Purpose of the Study:
- Investigate quantum effects on an asymmetric aluminum nanoparticle dimer using TDDFT.
- Model nanoparticle-on-film coupling for plasmonic antenna applications.
- Examine electrical tunability of plasmon resonances in nanoscale junctions.
Main Methods:
- Time-dependent density functional theory (TDDFT) simulations.
- Analysis of an asymmetric aluminum nanoparticle dimer (nanoparticle on a cuboid).
- Investigation of plasmon resonance shifts and appearance of charge transfer plasmons with decreasing gap distance.
Main Results:
- Redshift of dipolar gap plasmon (DGP) and emergence of charge transfer plasmon (CTP) as distance decreases.
- Observation of a smooth transition from capacitive to conductive coupling in aluminum.
- Identification of a DGP-CTP crossover distance (∼6 Å) with distinct CTP and anti-bonding gap plasmon modes.
- Demonstration of reversible tuning of plasmon modes via electrical bias by modifying tunneling barrier conductance.
Conclusions:
- Asymmetry is crucial for active plasmonic devices utilizing electrical bias.
- Electrical bias enables reversible tuning of plasmon modes over a wider wavelength range.
- Quantum effects significantly influence plasmon behavior in nanoscale junctions.

