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Reversible Polymorphic Transition and Hysteresis-Driven Phase Selectivity in Single-Crystalline C8-BTBT Rods
Min-Woo Kim1, Sooncheol Kwon2,3, Jehan Kim4
1School of Materials Science and Engineering (SMSE), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
Researchers developed a stable, reversible organic semiconductor polymorph for nonvolatile memory. This material exhibits a significant, stable change in resistivity with temperature cycling, enabling multi-value data storage.
Area of Science:
- Materials Science
- Organic Electronics
- Solid-State Physics
Background:
- Organic semiconductors (OSCs) readily form metastable polymorphs, but achieving stable, reversible transformations has been challenging due to weak intermolecular forces and poor phase control.
- Existing OSCs lack the stability and homogeneity required for reliable applications involving external stimuli-induced phase transitions.
Purpose of the Study:
- To fabricate a stable, thermally reversible polymorph in organic semiconductors.
- To investigate the potential of this polymorph for applications in nonvolatile multivalue memory devices.
Main Methods:
- Fabrication of a single crystalline 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene polymorph on low molecular weight poly(methyl methacrylate) using solvent vapor annealing.
- Characterization using in situ grazing incident wide angle X-ray scattering (GIWAXS).
- Computational analysis including visualization for electronic and structural simulations and density functional theory (DFT) calculations.
Main Results:
- A novel OSC polymorph was created where molecules exhibit a slight tilt towards the substrate, increasing resistivity.
- The polymorph demonstrates a stable, reversible resistivity change of 5.5 orders of magnitude with thermal cycling and hysteresis.
- Diverse resistivities near room temperature were achieved by varying cycling temperatures, suitable for multivalue memory applications.
Conclusions:
- Molecular tilt is the key factor governing charge transport and reversible phase transformations in this OSC polymorph.
- The fabricated material offers stable, tunable resistivity, paving the way for advanced nonvolatile memory technologies.
- A homogeneous, single-crystalline phase is maintained at each temperature during cycling, ensuring reliable performance.
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