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A 120-ke- Full-Well Capacity 160-µV/e- Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow

Isao Takayanagi1, Ken Miyauchi1, Shunsuke Okura2

  • 1Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013, Japan.

Sensors (Basel, Switzerland)
|December 22, 2019
PubMed

Keywords:
CMOS image sensorbackside illuminationhigh full-well capacityhigh sensitivitylateral overflow integration capacitorsingle exposurewide dynamic range

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