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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Environmental gas impact on the emission volume of X-rays near the interface in the variable pressure scanning

O Mansour1, N Lateb2, A Zoukel2

  • 1L2MSM Laboratory, Physics department, Faculty of Exact Sciences, Djilali Liabes University, BP.89, Sidi Bel-Abbes 22000, Algeria; Université Ziane Achour de Djelfa, Faculté des sciences et de technologie, Algeria.

Ultramicroscopy
|December 24, 2019
PubMed

Keywords:
EDS profileInterfaceMonte Carlo SimulationSecondary X-ray fluorescenceVP-SEMX-ray absorption

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