Data for functional TiO₂ embedded Silicon photodetectors under varying illumination and bias conditions

In this data in brief (DIB) article, major photodetector (PD) characteristics of anisotype (Ag/n-TiO₂/p-Si/Al), isotype (Ag/n-TiO₂/n-Si/Ag) and M-S-M type (Ag/p-Si/Al) structures under reverse bias conditions (-1 to -5 V) over a broad spectral region (300-800 nm) have been presented. Critical figures of merit like current-voltage (IV), responsivity (R), detectivity (D), gain, sensitivity (S), linear dynamic range (LDR), normalized photo to dark current ratio (NPDR) and noise equivalent power (NEP) of TiO₂ embedded Si PDs are presented in graphical forms. I-V characteristics of PDs under dark and monochromatic illuminations (365, 425, 515 and 600 nm) were acquired by using source measure unit (Kithley). Internal gain was deduced from photoresponse spectra which were recorded with the help of Potentiostat/Galvanostat (PGSTAT302N, Autolab) under monochromatic illumination at 100 Hz chopping frequency. Quantum efficiency instrument supplied by Optosolar was utilized to accurately measure the spectral responsivity and detectivity of PDs in wide spectral region (300-1100 nm). Please refer our main article [1] to understand the role of functional nanocrystalline TiO₂ films on the performance of the photodetectors.