Application of digital phase shifting moiré method in interface and dislocation location recognition and real strain...

In high-resolution transmission electron microscopy (HRTEM) images of heterostructures, it is always difficult to accurately determine the interface position and identify dislocations in a large field of view at tens to hundreds of nanometers due to the small lattice differences. However, in the heterostructure, the determination of the interface position is the key to obtain the true mismatch stress/strain field of the interface. Due to the magnifying effect of the digital moiré method on small differences, digital moiré technology was applied to determine Ge/Si heterostructure interfaces and large-area identification interface dislocations in HRTEM lattice diagrams in this study. By optimizing the frequency and angle of the reference lattice, the interface and dislocation position are clearly and intuitively displayed. How to accurately determine the position of the heterostructure interface and the dislocation of the large-area recognition interface from HRTEM images are studied through simulation experiments. The results show that when the frequency of the reference lattice and the specimen lattice are close, and the angle between them is within 10°, the position of the heterostructure interface can be accurately and intuitively determined by the naked eye according to the distortion characteristics of the moiré fringe. When the frequency of the reference lattice is 0.7 to 0.9 times of the specimen lattice, and the rotation angle is within 8°, the visually clear crossover phenomenon of the moiré fringes is used for large-area identification of interface dislocations. Using the phase measurement interface position sensitivity can reach the Å level. Using the phase-shifting digital moiré method the strain field on the dislocation core at the Ge/Si heterostructure interface and the interface stress distribution were quantitatively analyzed. Compared with the Peierls-Nabarro dislocation model and the Foreman dislocation model, Foreman's variable factor α = 4 is more suitable for describing the strain field of misfit dislocations on the Ge/Si heterostructure interface.