Hybrid Si-VO₂ modulator with ultra-high extinction ratio based on slot TM mode

Nowadays, the development of modern optical systems relies on optical device size minimization and operating power reduction. Optical modulator based on silicon on insulator (SOI) platform is a key element in different optical systems. Therefore, the optical modulator with compact size and low insertion loss could improve the optical system efficiency. In this work, a novel compact optical modulator based on hybrid plasmonic/silicon layers is introduced. The full vectorial finite element method (FV-FEM) is used to numerically analyze the proposed design. Vanadium dioxide (VO₂) is also utilized as a cap layer to control the modulation process. The insertion loss (IL) and extinction ratio (ER) of the suggested modulator are equal to 2.1 dB/µm and 28 dB/µm, respectively, at the operating wavelength 1.55 µm. Consequently, high figure-of-merit (FoM) =ER/IL = 13.5 is achieved with an optical bandwidth (ER > 3 dB) greater than 1 µm, which is large in comparison to pervious designs.