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Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics.

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    This study introduces a novel pulsed-laser testing method using Bessel beams to accurately predict microelectronic radiation effects. The technique successfully emulates heavy ion impacts, showing strong agreement with real-world space radiation test results.

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    Area of Science:

    • Microelectronics
    • Radiation Effects
    • Optical Physics

    Background:

    • Pulsed-laser testing offers high spatial resolution and cost-effectiveness for studying space radiation effects in microelectronics.
    • Quantitative prediction of radiation effects using optical methods remains a challenge.

    Purpose of the Study:

    • To develop a new pulsed-laser testing approach for quantitatively predicting space-based radiation effects in microelectronics.
    • To emulate heavy ion radiation effects using a Bessel beam and two-photon absorption.

    Main Methods:

    • Modified a pulsed-laser setup to generate a specific carrier distribution using a Bessel beam and two-photon absorption.
    • Characterized the carrier distribution with sub-micron spatial resolution.
    • Developed an analytic expression to describe the carrier distribution and tune the laser to emulate specific heavy ions.

    Main Results:

    • Achieved a carrier distribution similar to that of heavy ion impacts.
    • Demonstrated quantitative prediction of device response under simulated heavy ion conditions.
    • Observed strong agreement between pulsed-laser test results and heavy ion test results for a silicon photodiode.

    Conclusions:

    • The novel pulsed-laser testing method enables accurate emulation of heavy ion radiation effects.
    • This technique provides a cost-effective and spatially resolved alternative to accelerator-based testing for space radiation studies.
    • The findings pave the way for improved reliability and testing of space-based microelectronics.